Samsung M3 78T5663RZ3-CF7 2GB vs Crucial Technology CT4G4DFS824A.M8FE 4GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Crucial Technology CT4G4DFS824A.M8FE 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 12

测试中的平均数值

Crucial Technology CT4G4DFS824A.M8FE 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.M8FE 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 65

左右 -171% 更低的延时
更快的写入速度，GB/s

6.6 2,784.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 24
读取速度，GB/s

4,806.8 12.0
写入速度，GB/s

2,784.6 6.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

932 1433

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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SK Hynix HMA82GU6AFR8N-UH 16GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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Crucial Technology CT51264BA1339.D16F 4GB

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Micron Technology 16A6A2G64HZ-2-2E1 16GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Kingston 9905711-017.A00G 4GB

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SpecTek Incorporated ?????????????????? 2GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

Essencore Limited KD48GU880-36A180U 8GB

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Corsair CMU16GX4M2A2666C16 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Corsair CMR128GX4M8Z2933C16 16GB

Corsair CMR128GX4M8Z2933C16 16GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Samsung M378A4G43MB1-CTD 32GB

Samsung M378A4G43MB1-CTD 32GB