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Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB

Samsung M3 78T5663RZ3-CF7 2GB vs Crucial Technology CT8G4DFRA32A.M8FR 8GB

总分
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Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分
star star star star star
Crucial Technology CT8G4DFRA32A.M8FR 8GB

Crucial Technology CT8G4DFRA32A.M8FR 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 19.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,784.6 left arrow 14.6
    测试中的平均数值
Crucial Technology CT8G4DFRA32A.M8FR 8GB 需要考虑的原因
Crucial Technology CT8G4DFRA32A.M8FR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 65
    左右 -91% 更低的延时
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 34
  • 读取速度，GB/s
    4,806.8 left arrow 19.3
  • 写入速度，GB/s
    2,784.6 left arrow 14.6
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    932 left arrow 3249

Samsung M3 78T5663RZ3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

Crucial Technology CT8G4DFRA32A.M8FR 8GB RAM的比较

Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M3 78T5663RZ3-CF7 2GB
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G Skill Intl F3-12800CL7-4GBXM 4GB
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AMD AE34G1601U1 4GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
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内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
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内存RAM
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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