Samsung M3 78T5663RZ3-CF7 2GB vs Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 17.9

测试中的平均数值
更快的写入速度，GB/s

2,784.6 15.9

测试中的平均数值

Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 65

左右 -124% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 29
读取速度，GB/s

4,806.8 17.9
写入速度，GB/s

2,784.6 15.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

932 3501

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS16G4D240FSB.16FBD 16GB

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Samsung M393B1G70BH0-YK0 8GB

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GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

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Kingston 9905663-005.A00G 16GB

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Kingston 99U5471-033.A00LF 4GB

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SK Hynix HMA82GU6AFR8N-UH 16GB

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Corsair CM5S16GM4800A40K2 16GB

Panram International Corporation D4U2666P-8G 8GB

Panram International Corporation D4U2666P-8G 8GB