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Samsung M3 78T5663RZ3-CF7 2GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
比较
Samsung M3 78T5663RZ3-CF7 2GB vs Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
总分
Samsung M3 78T5663RZ3-CF7 2GB
总分
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
更快的读取速度,GB/s
4
18.2
测试中的平均数值
更快的写入速度,GB/s
2,784.6
15.9
测试中的平均数值
需要考虑的原因
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
65
左右 -124% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
29
读取速度,GB/s
4,806.8
18.2
写入速度,GB/s
2,784.6
15.9
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
932
3866
Samsung M3 78T5663RZ3-CF7 2GB RAM的比较
Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB RAM的比较
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston ACR16D3LS1NGG/2G 2GB
Crucial Technology CT8G4DFS824A.C8FHD1 8GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-3600C14-16GTRS 16GB
SK Hynix HMA851S6JJR6N-VK 4GB
SK Hynix HMA851S6CJR6N-VK 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Kingston 9905624-022.A00G 8GB
Apacer Technology 78.C1GET.9K10C 8GB
Kingston HP32D4S2S1ME-4 4GB
Corsair CMX8GX3M2A1600C11 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F4-4266C17-16GTZRB 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-4000C17-8GTRS 8GB
SK Hynix HYMP512S64CP8-Y5 1GB
Kingston 9905744-005.A00G 16GB
PUSKILL DDR3 1600 8G 8GB
Aquarius Production Company LLC 16G-D4-2666-MR 4GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3200C14-16GTZDCB 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Micron Technology 8ATF51264AZ-2G1B1 4GB
报告一个错误
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