Samsung M3 91T2953GZ3-CF7 1GB vs Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

总分

Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

总分

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

差异规格评论

差异

Samsung M3 91T2953GZ3-CF7 1GB

需要考虑的原因
Samsung M3 91T2953GZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 12.1

测试中的平均数值

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 52

左右 -63% 更低的延时
更快的写入速度，GB/s

8.5 1,906.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 91T2953GZ3-CF7 1GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 32
读取速度，GB/s

4,672.4 12.1
写入速度，GB/s

1,906.4 8.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

698 2478

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT4G4DFS8213.C8FBD2 4GB

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Apacer Technology 78.C2GFP.C700B 8GB

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A-DATA Technology AD73I1B1672EG 2GB

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Micron Technology 16ATF2G64HZ-2G6J1 16GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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A-DATA Technology AO1P32NC8T1-BCSS 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

Kingston KHX2133C13D4/8GX 8GB

Kingston KHX2133C13D4/8GX 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Apacer Technology 78.CAGMT.40C0B 8GB

Apacer Technology 78.CAGMT.40C0B 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

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SK Hynix HMA81GU6CJR8N-UH 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB