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Samsung M3 91T2953GZ3-CF7 1GB
Micron Technology AFLD44EK2P 4GB

Samsung M3 91T2953GZ3-CF7 1GB vs Micron Technology AFLD44EK2P 4GB

总分
star star star star star
Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

总分
star star star star star
Micron Technology AFLD44EK2P 4GB

Micron Technology AFLD44EK2P 4GB

差异 规格 评论

差异

Samsung M3 91T2953GZ3-CF7 1GB 需要考虑的原因
Samsung M3 91T2953GZ3-CF7 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    52 left arrow 71
    左右 27% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 15.3
    测试中的平均数值
Micron Technology AFLD44EK2P 4GB 需要考虑的原因
Micron Technology AFLD44EK2P 4GB
报告一个错误
  • 更快的写入速度，GB/s
    6.8 left arrow 1,906.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M3 91T2953GZ3-CF7 1GB
Micron Technology AFLD44EK2P 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 71
  • 读取速度，GB/s
    4,672.4 left arrow 15.3
  • 写入速度，GB/s
    1,906.4 left arrow 6.8
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    698 left arrow 1767

Samsung M3 91T2953GZ3-CF7 1GB RAM的比较

Samsung M3 91T2953EZ3-CF7 1GB
Samsung M3 78T2953GZ3-CF7 1GB

Micron Technology AFLD44EK2P 4GB RAM的比较

Crucial Technology CT16G4DFD8266.M16FJ 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
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Corsair CMZ16GX3M2A1866C9 8GB
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Apacer Technology GD2.1527WC.001 8GB
内存RAM
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内存RAM
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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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Golden Empire CL14-16-16 D4-3000 4GB
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