Samsung M3 91T2953GZ3-CF7 1GB vs Mushkin MRA4S293MMMF32G 32GB

总分

Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

总分

Mushkin MRA4S293MMMF32G 32GB

Mushkin MRA4S293MMMF32G 32GB

差异规格评论

差异

Samsung M3 91T2953GZ3-CF7 1GB

需要考虑的原因
Samsung M3 91T2953GZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 15.7

测试中的平均数值

Mushkin MRA4S293MMMF32G 32GB

需要考虑的原因
Mushkin MRA4S293MMMF32G 32GB

报告一个错误

低于PassMark测试中的延时，ns

32 52

左右 -63% 更低的延时
更快的写入速度，GB/s

14.9 1,906.4

测试中的平均数值
更高的内存带宽，mbps

23400 6400

左右 3.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 91T2953GZ3-CF7 1GB

Mushkin MRA4S293MMMF32G 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 32
读取速度，GB/s

4,672.4 15.7
写入速度，GB/s

1,906.4 14.9
内存带宽，mbps

6400 23400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 800 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

698 3368

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Essencore Limited IM4AGU88A30-FGGHMB 16GB

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Kingston 9905584-016.A00LF 4GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Samsung M378B5673FH0-CH9 2GB

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Mushkin MRA4S293MMMF32G 32GB

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Micron Technology 36ASF2G72PZ-2G3B1 16GB

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Kingston KVR533D2N4 512MB

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Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Corsair CMK8GX4M2A2400C14 4GB

Corsair CMK8GX4M2A2400C14 4GB

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Corsair CM2X1024-8500C5D 1GB

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Samsung M378A2G43AB3-CWE 16GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology BLE4G4D26AFEA.8FBD 4GB

Crucial Technology BLE4G4D26AFEA.8FBD 4GB