Samsung M378A1G43EB1-CPB 8GB vs Corsair CMK16GX4M1E3200C16 16GB

总分

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

总分

Corsair CMK16GX4M1E3200C16 16GB

Corsair CMK16GX4M1E3200C16 16GB

差异规格评论

差异

Samsung M378A1G43EB1-CPB 8GB

需要考虑的原因
Samsung M378A1G43EB1-CPB 8GB

报告一个错误

更快的写入速度，GB/s

11.5 11.1

测试中的平均数值

Corsair CMK16GX4M1E3200C16 16GB

需要考虑的原因
Corsair CMK16GX4M1E3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 34

左右 -10% 更低的延时
更快的读取速度，GB/s

16.9 15.4

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A1G43EB1-CPB 8GB

Corsair CMK16GX4M1E3200C16 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

34 31
读取速度，GB/s

15.4 16.9
写入速度，GB/s

11.5 11.1
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2763 3132

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Mushkin 99[2/7/4]189F 4GB

Mushkin 99[2/7/4]189F 4GB

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

Corsair CMK16GX4M1E3200C16 16GB

Corsair CMK16GX4M1E3200C16 16GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

G Skill Intl F4-3200C14-8GTZSW 8GB

G Skill Intl F4-3200C14-8GTZSW 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Kingston XCCT36-MIE 16GB

Kingston XCCT36-MIE 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology CT16G4SFD8266.M16FH 16GB

Crucial Technology CT16G4SFD8266.M16FH 16GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

G Skill Intl F4-3200C16-16GSXWB 16GB

G Skill Intl F4-3200C16-16GSXWB 16GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A

SK Hynix HMT451S6AFR8A-PB 4GB

SK Hynix HMT451S6AFR8A-PB 4GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Apacer Technology 78.BAGN8.40C0B 4GB

Apacer Technology 78.BAGN8.40C0B 4GB

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

G Skill Intl F4-3200C16-16GTZRX 16GB

G Skill Intl F4-3200C16-16GTZRX 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Kingston CBD24D4S7D8MB-16 16GB

Kingston CBD24D4S7D8MB-16 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

Essencore Limited IM44GU48N26-GIIHA0 4GB