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Samsung M378A1K43BB1-CPB 8GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB

Samsung M378A1K43BB1-CPB 8GB vs A-DATA Technology AO1P26KC8T1-BXPS 8GB

总分
star star star star star
Samsung M378A1K43BB1-CPB 8GB

Samsung M378A1K43BB1-CPB 8GB

总分
star star star star star
A-DATA Technology AO1P26KC8T1-BXPS 8GB

A-DATA Technology AO1P26KC8T1-BXPS 8GB

差异 规格 评论

差异

Samsung M378A1K43BB1-CPB 8GB 需要考虑的原因
Samsung M378A1K43BB1-CPB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 85
    左右 59% 更低的延时
  • 更快的读取速度，GB/s
    14.9 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 5.4
    测试中的平均数值
A-DATA Technology AO1P26KC8T1-BXPS 8GB 需要考虑的原因
A-DATA Technology AO1P26KC8T1-BXPS 8GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25 更高的带宽

规格

完整的技术规格清单
Samsung M378A1K43BB1-CPB 8GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 85
  • 读取速度，GB/s
    14.9 left arrow 12.0
  • 写入速度，GB/s
    10.1 left arrow 5.4
  • 内存带宽，mbps
    17000 left arrow 21300
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2613 left arrow 1277

Samsung M378A1K43BB1-CPB 8GB RAM的比较

Samsung M378A1G43EB1-CPB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

A-DATA Technology AO1P26KC8T1-BXPS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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