RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BL16G32C16U4B.M16FE 16GB

Samsung M378A1K43EB2-CWE 8GB vs Crucial Technology BL16G32C16U4B.M16FE 16GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
Crucial Technology BL16G32C16U4B.M16FE 16GB

Crucial Technology BL16G32C16U4B.M16FE 16GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Crucial Technology BL16G32C16U4B.M16FE 16GB 需要考虑的原因
Crucial Technology BL16G32C16U4B.M16FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 33
    左右 -14% 更低的延时
  • 更快的读取速度，GB/s
    18.8 left arrow 17.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.7 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BL16G32C16U4B.M16FE 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 29
  • 读取速度，GB/s
    17.6 left arrow 18.8
  • 写入速度，GB/s
    12.0 left arrow 15.7
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 3734

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Crucial Technology BL16G32C16U4B.M16FE 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Kingston CBD32D4S2D8HD-16 16GB
Kingston CBD32D4S2D8HD-16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Corsair CMK8GX4M2C3000C16 4GB
Corsair CMK8GX4M2C3000C16 4GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston HP26D4S9D8MJ-16 16GB
Kingston HP26D4S9D8MJ-16 16GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Kingston KHX2666C15/16GX 16GB
Kingston KHX2666C15/16GX 16GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Kingston 9905665-014.A00G 4GB
Kingston 9905665-014.A00G 4GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
内存RAM
Kingston ACR26D4S9S8ME-8 8GB
Kingston ACR26D4S9S8ME-8 8GB
Kingston KHYXPX-MID 8GB
Kingston KHYXPX-MID 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
G Skill Intl F4-3000C14-16GVKD 16GB
G Skill Intl F4-3000C14-16GVKD 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
A-DATA Technology AM1P26KCST2-BABS 16GB
A-DATA Technology AM1P26KCST2-BABS 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-3200C14-8GVK 8GB
G Skill Intl F4-3200C14-8GVK 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston XG9XKG-MIE 16GB
Kingston XG9XKG-MIE 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Avant Technology J641GU48J5213NG 8GB
Avant Technology J641GU48J5213NG 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-4000C18-8GTRG 8GB
G Skill Intl F4-4000C18-8GTRG 8GB
内存RAM