Samsung M378A1K43EB2-CWE 8GB vs Crucial Technology CT8G4SFD824A.C16FBD2 8GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 90

左右 63% 更低的延时
更快的读取速度，GB/s

17.6 14.6

测试中的平均数值
更快的写入速度，GB/s

12.0 7.5

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

需要考虑的原因
Crucial Technology CT8G4SFD824A.C16FBD2 8GB

报告一个错误

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 90
读取速度，GB/s

17.6 14.6
写入速度，GB/s

12.0 7.5
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2910 1546

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

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Kingston 9965516-430.A00G 16GB

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Micron Technology 8ATF1G64HZ-2G6J1 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Micron Technology 8ATF1G64HZ-2G3H1 8GB

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Kingston KHX318C10FR/8G 8GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

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SK Hynix HMAA4GU6MJR8N-VK 32GB

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Kingston KHX2133C11D3/4GX 4GB

Corsair CMH32GX4M2E3200C16 16GB

Corsair CMH32GX4M2E3200C16 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

JUHOR JHD2666U1908JG 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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