Samsung M378A1K43EB2-CWE 8GB vs Essencore Limited IM48GU88N24-FFFHA0 8GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

Essencore Limited IM48GU88N24-FFFHA0 8GB

Essencore Limited IM48GU88N24-FFFHA0 8GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 48

左右 31% 更低的延时
更快的读取速度，GB/s

17.6 16.5

测试中的平均数值
更快的写入速度，GB/s

12.0 11.2

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Essencore Limited IM48GU88N24-FFFHA0 8GB

需要考虑的原因
Essencore Limited IM48GU88N24-FFFHA0 8GB

报告一个错误

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

Essencore Limited IM48GU88N24-FFFHA0 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 48
读取速度，GB/s

17.6 16.5
写入速度，GB/s

12.0 11.2
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2910 3207

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378A1K43EB2-CWE 8GB

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Essencore Limited IM48GU88N24-FFFHA0 8GB

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Mushkin 991586 2GB

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Crucial Technology BL8G30C15U4B.M8FE 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMU32GX4M4C3400C16 8GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

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Transcend Information AQD-D4U4GN21-SG 4GB

AMD R5S38G1601U2S 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Micron Technology 8JSF25664HZ-1G4D1 2GB

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Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

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