Samsung M378A1K43EB2-CWE 8GB vs G Skill Intl F4-3000C14-16GVR 16GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

G Skill Intl F4-3000C14-16GVR 16GB

G Skill Intl F4-3000C14-16GVR 16GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 35

左右 6% 更低的延时
更快的读取速度，GB/s

17.6 16.2

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

G Skill Intl F4-3000C14-16GVR 16GB

需要考虑的原因
G Skill Intl F4-3000C14-16GVR 16GB

报告一个错误

更快的写入速度，GB/s

12.8 12.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

G Skill Intl F4-3000C14-16GVR 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 35
读取速度，GB/s

17.6 16.2
写入速度，GB/s

12.0 12.8
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2910 3246

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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V-GEN D4H4GS24A8 4GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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SK Hynix HMA82GU6AFR8N-TF 16GB

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Hewlett-Packard 7EH99AA# 16GB

Hewlett-Packard 7EH99AA# 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Kingston 99U5713-001.A00G 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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A-DATA Technology DDR2 800G 2GB

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