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Samsung M378A1K43EB2-CWE 8GB
Kingmax Semiconductor GSJF62F-DA---------- 4GB

Samsung M378A1K43EB2-CWE 8GB vs Kingmax Semiconductor GSJF62F-DA---------- 4GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
Kingmax Semiconductor GSJF62F-DA---------- 4GB

Kingmax Semiconductor GSJF62F-DA---------- 4GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 95
    左右 65% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 6.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
Kingmax Semiconductor GSJF62F-DA---------- 4GB 需要考虑的原因
Kingmax Semiconductor GSJF62F-DA---------- 4GB
报告一个错误

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Kingmax Semiconductor GSJF62F-DA---------- 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 95
  • 读取速度，GB/s
    17.6 left arrow 14.4
  • 写入速度，GB/s
    12.0 left arrow 6.4
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 1450

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Kingmax Semiconductor GSJF62F-DA---------- 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CB8GS2400.C8D 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Kingston KF3600C18D4/16GX 16GB
Kingston KF3600C18D4/16GX 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3333C16-16GTZR 16GB
G Skill Intl F4-3333C16-16GTZR 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Corsair CMK16GX4M2E3200C16 8GB
Corsair CMK16GX4M2E3200C16 8GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Kingston KHX2933C17D4/8G 8GB
Kingston KHX2933C17D4/8G 8GB
内存RAM
Samsung M391B5273CH0-CH9 4GB
Samsung M391B5273CH0-CH9 4GB
Corsair CMU16GX4M2D3200C16 8GB
Corsair CMU16GX4M2D3200C16 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Corsair CMR16GX4M2C3600C18 8GB
Corsair CMR16GX4M2C3600C18 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Kingston 9905633-017.A00G 8GB
Kingston 9905633-017.A00G 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-3400C16-8GTZKW 8GB
G Skill Intl F4-3400C16-8GTZKW 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Kingston 9965669-027.A00G 16GB
Kingston 9965669-027.A00G 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C16-8GVKB 8GB
G Skill Intl F4-3200C16-8GVKB 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology BLS8G4D240FSA.M16FAD 8GB
Crucial Technology BLS8G4D240FSA.M16FAD 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMD32GX4M4B3600C16 8GB
Corsair CMD32GX4M4B3600C16 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Corsair CMK32GX4M2B3466C16 16GB
Corsair CMK32GX4M2B3466C16 16GB
内存RAM