Samsung M378A1K43EB2-CWE 8GB vs Kingston 9905743-023.A00G 8GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

Kingston 9905743-023.A00G 8GB

Kingston 9905743-023.A00G 8GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 38

左右 13% 更低的延时
更快的读取速度，GB/s

17.6 14.7

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Kingston 9905743-023.A00G 8GB

需要考虑的原因
Kingston 9905743-023.A00G 8GB

报告一个错误

更快的写入速度，GB/s

12.7 12.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

Kingston 9905743-023.A00G 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 38
读取速度，GB/s

17.6 14.7
写入速度，GB/s

12.0 12.7
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2910 2725

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Qimonda 72T128420EFA3SB2 1GB

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Samsung M378B5273CH0-CH9 4GB

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Corsair CMK32GX4M4B3466C16 8GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Corsair CMD16GX4M4B3333C16 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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A-DATA Technology AD5U48008G-B 8GB

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Corsair CM4X16GC3200C16K4 16GB