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Samsung M378A1K43EB2-CWE 8GB
Kingston 9905744-005.A00G 16GB

Samsung M378A1K43EB2-CWE 8GB vs Kingston 9905744-005.A00G 16GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
Kingston 9905744-005.A00G 16GB

Kingston 9905744-005.A00G 16GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.6 left arrow 17.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Kingston 9905744-005.A00G 16GB 需要考虑的原因
Kingston 9905744-005.A00G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 33
    左右 -6% 更低的延时
  • 更快的写入速度，GB/s
    14.2 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Kingston 9905744-005.A00G 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 31
  • 读取速度，GB/s
    17.6 left arrow 17.3
  • 写入速度，GB/s
    12.0 left arrow 14.2
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 2949

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Kingston 9905744-005.A00G 16GB RAM的比较

G Skill Intl F4-3000C15-8GVKB 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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PNY Electronics PNY 2GB
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内存RAM
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SK Hynix HMA84GL7AFR4N-UH 32GB
内存RAM
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Corsair CMZ8GX3M1A1866C10 8GB
Essencore Limited KD48GS88J-26N1900 8GB
Essencore Limited KD48GS88J-26N1900 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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Kingston 9905403-156.A00LF 2GB
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G Skill Intl F4-3200C15-8GVR 8GB
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Samsung M3 78T5663RZ3-CE6 2GB
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Crucial Technology CT8G4DFS824A.M8FA 8GB
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