Samsung M378A1K43EB2-CWE 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

报告一个错误

低于PassMark测试中的延时，ns

18 33

左右 -83% 更低的延时
更快的读取速度，GB/s

20.4 17.6

测试中的平均数值
更快的写入速度，GB/s

17.2 12.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 18
读取速度，GB/s

17.6 20.4
写入速度，GB/s

12.0 17.2
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2910 3814

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Chun Well Technology Holding Limited D4U0826190B 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

Kingston CBD24D4S7S8ME-8 8GB

Kingston CBD24D4S7S8ME-8 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Crucial Technology CT8G4DFRA266.C4FE 8GB

Crucial Technology CT8G4DFRA266.C4FE 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Mushkin 99[2/7/4]200[F/T] 8GB

Mushkin 99[2/7/4]200[F/T] 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F4-2800C14-16GVK 16GB

G Skill Intl F4-2800C14-16GVK 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Kingston ACR26D4S9S1ME-4 4GB

Kingston ACR26D4S9S1ME-4 4GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Kingston HP32D4U8S8HD-8X 8GB

Kingston HP32D4U8S8HD-8X 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB

Crucial Technology BL8G36C16U4BL.M8FE1 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Crucial Technology BLT8G4D26AFTA.16FBD 8GB

Crucial Technology BLT8G4D26AFTA.16FBD 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Crucial Technology BLS8G4D240FSA.16FBD 8GB

Crucial Technology BLS8G4D240FSA.16FBD 8GB

Nanya Technology NT4GC64C88B1NS-DI 4GB

Nanya Technology NT4GC64C88B1NS-DI 4GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB