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Samsung M378A2K43DB1-CVF 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB

Samsung M378A2K43DB1-CVF 16GB vs A-DATA Technology AD4S3200316G22-BHYD 16GB

总分
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Samsung M378A2K43DB1-CVF 16GB

Samsung M378A2K43DB1-CVF 16GB

总分
star star star star star
A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

差异 规格 评论

差异

Samsung M378A2K43DB1-CVF 16GB 需要考虑的原因
Samsung M378A2K43DB1-CVF 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 66
    左右 55% 更低的延时
  • 更快的读取速度，GB/s
    16.4 left arrow 13.9
    测试中的平均数值
A-DATA Technology AD4S3200316G22-BHYD 16GB 需要考虑的原因
A-DATA Technology AD4S3200316G22-BHYD 16GB
报告一个错误
  • 更快的写入速度，GB/s
    13.2 left arrow 13.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 23400
    左右 1.09 更高的带宽

规格

完整的技术规格清单
Samsung M378A2K43DB1-CVF 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 66
  • 读取速度，GB/s
    16.4 left arrow 13.9
  • 写入速度，GB/s
    13.1 left arrow 13.2
  • 内存带宽，mbps
    23400 left arrow 25600
Other
  • 描述
    PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    3310 left arrow 2429

Samsung M378A2K43DB1-CVF 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB RAM的比较

A-DATA Technology DDR4 3000 2OZ 8GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M378A2K43DB1-CVF 16GB
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内存RAM
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