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Samsung M378A5143EB1-CPB 4GB
Kingston 9905678-014.A00G 4GB

Samsung M378A5143EB1-CPB 4GB vs Kingston 9905678-014.A00G 4GB

总分
star star star star star
Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

总分
star star star star star
Kingston 9905678-014.A00G 4GB

Kingston 9905678-014.A00G 4GB

差异 规格 评论

差异

Samsung M378A5143EB1-CPB 4GB 需要考虑的原因
Samsung M378A5143EB1-CPB 4GB
报告一个错误
Kingston 9905678-014.A00G 4GB 需要考虑的原因
Kingston 9905678-014.A00G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 38
    左右 -23% 更低的延时
  • 更快的读取速度，GB/s
    16.5 left arrow 14.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 10.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13 更高的带宽

规格

完整的技术规格清单
Samsung M378A5143EB1-CPB 4GB
Kingston 9905678-014.A00G 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 31
  • 读取速度，GB/s
    14.6 left arrow 16.5
  • 写入速度，GB/s
    10.8 left arrow 12.7
  • 内存带宽，mbps
    17000 left arrow 19200
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2298 left arrow 2633

Samsung M378A5143EB1-CPB 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP112U64CP8-S5 1GB

Kingston 9905678-014.A00G 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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SK Hynix HMA42GR7MFR4N-TF 16GB
SK Hynix HMA42GR7MFR4N-TF 16GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Corsair CMR16GX4M2K4266C19 8GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Corsair CMK16GX4M4C3000C16 4GB
Corsair CMK16GX4M4C3000C16 4GB
内存RAM
Kingston 9905403-437.A01LF 4GB
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Crucial Technology CT8G4SFS824A.M8FJ 8GB
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内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMK64GX4M4B3200C16 16GB
Corsair CMK64GX4M4B3200C16 16GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-2400C15-16GVR 16GB
G Skill Intl F4-2400C15-16GVR 16GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
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Crucial Technology BLS16G4D30CEST.16FD 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD16GX4M4B3400C16 4GB
Corsair CMD16GX4M4B3400C16 4GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Roa Logic BV W4U2666CX1-8G 8GB
Roa Logic BV W4U2666CX1-8G 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905744-062.A00G 32GB
Kingston 9905744-062.A00G 32GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMU16GX4M2D3000C16 8GB
Corsair CMU16GX4M2D3000C16 8GB
内存RAM