RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M378A5244CB0-CTD 4GB
A-DATA Technology DDR4 2800 2OZ 4GB

Samsung M378A5244CB0-CTD 4GB vs A-DATA Technology DDR4 2800 2OZ 4GB

总分
star star star star star
Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

总分
star star star star star
A-DATA Technology DDR4 2800 2OZ 4GB

A-DATA Technology DDR4 2800 2OZ 4GB

差异 规格 评论

差异

Samsung M378A5244CB0-CTD 4GB 需要考虑的原因
Samsung M378A5244CB0-CTD 4GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25% 更高的带宽
A-DATA Technology DDR4 2800 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR4 2800 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 36
    左右 -9% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 15.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A5244CB0-CTD 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 33
  • 读取速度，GB/s
    15.8 left arrow 16.2
  • 写入速度，GB/s
    11.8 left arrow 12.2
  • 内存带宽，mbps
    21300 left arrow 17000
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2497 left arrow 3026

Samsung M378A5244CB0-CTD 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB

A-DATA Technology DDR4 2800 2OZ 4GB RAM的比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMZ16GX3M2A1600C10 8GB
Corsair CMZ16GX3M2A1600C10 8GB
Corsair CMY16GX3M2A1600C9 8GB
Corsair CMY16GX3M2A1600C9 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Essencore Limited KD4AGU880-36A180U 16GB
Essencore Limited KD4AGU880-36A180U 16GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology CT4G4SFS8213.C8FHP 4GB
Crucial Technology CT4G4SFS8213.C8FHP 4GB
内存RAM
Crucial Technology CT8G4SFS824A.M8FD 8GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMSO4GX4M1A2133C15 4GB
Corsair CMSO4GX4M1A2133C15 4GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-4000C19-8GTZKW 8GB
G Skill Intl F4-4000C19-8GTZKW 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Corsair CMT128GX4M4C3200C16 32GB
Corsair CMT128GX4M4C3200C16 32GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905744-006.A00G 16GB
Kingston 9905744-006.A00G 16GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
Kingston 9905622-055.A00G 4GB
Kingston 9905622-055.A00G 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-4000C17-16GTZRB 16GB
G Skill Intl F4-4000C17-16GTZRB 16GB
内存RAM
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Kingston 9965643-006.A01G 8GB
Kingston 9965643-006.A01G 8GB
内存RAM