Samsung M378A5244CB0-CTD 4GB vs Corsair CMK16GX4M2Z2933C16 8GB

总分

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

总分

Corsair CMK16GX4M2Z2933C16 8GB

Corsair CMK16GX4M2Z2933C16 8GB

差异规格评论

差异

Samsung M378A5244CB0-CTD 4GB

需要考虑的原因
Samsung M378A5244CB0-CTD 4GB

报告一个错误

Corsair CMK16GX4M2Z2933C16 8GB

需要考虑的原因
Corsair CMK16GX4M2Z2933C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 36

左右 -20% 更低的延时
更快的读取速度，GB/s

17.4 15.8

测试中的平均数值
更快的写入速度，GB/s

14.5 11.8

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A5244CB0-CTD 4GB

Corsair CMK16GX4M2Z2933C16 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 30
读取速度，GB/s

15.8 17.4
写入速度，GB/s

11.8 14.5
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2497 3393

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4000C14-16GTZR 16GB

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Patriot Memory (PDP Systems) PSD34G13332S 4GB

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AMD R538G1601U2S 8GB

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G Skill Intl F4-2666C15-8GVR 8GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

Kingmax Semiconductor GLNH23F-18---------- 16GB

Kingmax Semiconductor GLNH23F-18---------- 16GB

Samsung M378A5244CB0-CTD 4GB

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Kingston MSI24D4S7D8MH-16 16GB

Kingston MSI24D4S7D8MH-16 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Apacer Technology 78.BAGN8.AZC0B 4GB

Apacer Technology 78.BAGN8.AZC0B 4GB