Samsung M378A5244CB0-CTD 4GB vs Micron Technology 16ATF2G64AZ-2G6J1 16GB

总分

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

总分

Micron Technology 16ATF2G64AZ-2G6J1 16GB

Micron Technology 16ATF2G64AZ-2G6J1 16GB

差异规格评论

差异

Samsung M378A5244CB0-CTD 4GB

需要考虑的原因
Samsung M378A5244CB0-CTD 4GB

报告一个错误

Micron Technology 16ATF2G64AZ-2G6J1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-2G6J1 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 36

左右 -9% 更低的延时
更快的读取速度，GB/s

16.1 15.8

测试中的平均数值
更快的写入速度，GB/s

12.7 11.8

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A5244CB0-CTD 4GB

Micron Technology 16ATF2G64AZ-2G6J1 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 33
读取速度，GB/s

15.8 16.1
写入速度，GB/s

11.8 12.7
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2497 3181

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A5244CB0-CTD 4GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Team Group Inc. Vulcan-1600 4GB

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Essencore Limited IM48GU48N21-FFFHM 8GB

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Chun Well Technology Holding Limited MD4U1632161DCW 16GB

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Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB