Samsung M378A5244CB0-CTD 4GB vs Samsung M378A5244CB0-CRC 4GB

总分

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

总分

Samsung M378A5244CB0-CRC 4GB

Samsung M378A5244CB0-CRC 4GB

差异规格评论

差异

Samsung M378A5244CB0-CTD 4GB

需要考虑的原因
Samsung M378A5244CB0-CTD 4GB

报告一个错误

更快的读取速度，GB/s

15.8 15

测试中的平均数值
更快的写入速度，GB/s

11.8 10.6

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Samsung M378A5244CB0-CRC 4GB

需要考虑的原因
Samsung M378A5244CB0-CRC 4GB

报告一个错误

规格

完整的技术规格清单

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CRC 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 36
读取速度，GB/s

15.8 15.0
写入速度，GB/s

11.8 10.6
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2497 2247

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 78.D2GF2.AU30B 16GB

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G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Corsair CMK16GX4M2Z3600C18 8GB

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Kingston 99P5471-002.A00LF 2GB

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A-DATA Technology DOVF1B163G2G 2GB

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Corsair CMK32GX4M4A2400C12 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

ASint Technology SSA302G08-EGN1C 4GB

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Crucial Technology CT16G4SFD832A.C16FJ 16GB

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Kingston KHX1600C9D3/4G 4GB

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Kingston 9905598-028.A00G 8GB

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Team Group Inc. Vulcan-1600 4GB

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Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB