Samsung M378B5173BH0-CH9 4GB vs Corsair CMK16GX4M2A2666C18 8GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Corsair CMK16GX4M2A2666C18 8GB

Corsair CMK16GX4M2A2666C18 8GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

Corsair CMK16GX4M2A2666C18 8GB

需要考虑的原因
Corsair CMK16GX4M2A2666C18 8GB

报告一个错误

更快的读取速度，GB/s

18.2 13.4

测试中的平均数值
更快的写入速度，GB/s

14.2 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Corsair CMK16GX4M2A2666C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 23
读取速度，GB/s

13.4 18.2
写入速度，GB/s

8.0 14.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2269 3245

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Neo Forza NMUD480E82-3600 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Transcend Information TS512MLH64V4H 4GB

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Kingston 9905471-002.A00LF 2GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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G Skill Intl F4-3200C16-16GTRG 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Crucial Technology CT8G4DFD824A.M16FF 8GB

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Ramaxel Technology RMSA3260MD78HAF-2666 8GB

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G Skill Intl F4-2800C18-8GRS 8GB

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Samsung M391B5673EH1-CH9 2GB

Team Group Inc. TEAMGROUP-UD4-4000 4GB

Team Group Inc. TEAMGROUP-UD4-4000 4GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Kingston 99U5702-020.A00G 8GB

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Kingston 9965525-155.A00LF 8GB

Corsair CMD16GX4M2B3466C16 8GB

Corsair CMD16GX4M2B3466C16 8GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Corsair CM4X16GC3200C16K4 16GB

Corsair CM4X16GC3200C16K4 16GB