Samsung M378B5173BH0-CH9 4GB vs Corsair CMSX8GX4M1A2666C18 8GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Corsair CMSX8GX4M1A2666C18 8GB

Corsair CMSX8GX4M1A2666C18 8GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 37

左右 38% 更低的延时

Corsair CMSX8GX4M1A2666C18 8GB

需要考虑的原因
Corsair CMSX8GX4M1A2666C18 8GB

报告一个错误

更快的读取速度，GB/s

16.8 13.4

测试中的平均数值
更快的写入速度，GB/s

13.4 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Corsair CMSX8GX4M1A2666C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 37
读取速度，GB/s

13.4 16.8
写入速度，GB/s

8.0 13.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2269 2990

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Crucial Technology CT8G4DFS8266.M8FD 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Samsung M3 78T3354BZ0-CCC 256MB

Kingston XW21KG-MIE-NX 8GB

Kingston XW21KG-MIE-NX 8GB