Samsung M378B5173BH0-CH9 4GB vs Crucial Technology BL8G32C16U4R.M8FE1 8GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Crucial Technology BL8G32C16U4R.M8FE1 8GB

Crucial Technology BL8G32C16U4R.M8FE1 8GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 31

左右 26% 更低的延时

Crucial Technology BL8G32C16U4R.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4R.M8FE1 8GB

报告一个错误

更快的读取速度，GB/s

18 13.4

测试中的平均数值
更快的写入速度，GB/s

14.8 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Crucial Technology BL8G32C16U4R.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 31
读取速度，GB/s

13.4 18.0
写入速度，GB/s

8.0 14.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2269 3497

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston 9965525-018.A00LF 4GB

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Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

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Kingston KVR533D2N4 512MB

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Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMK8GX4M1D3000C16 8GB

Corsair CMK8GX4M1D3000C16 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Crucial Technology BLE4G4D30AEEA.K8FE 4GB

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Kingston HP669238-071-HYC 4GB

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OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

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takeMS International AG TMS2GB264D082-805G 2GB

Essencore Limited KD48GU481-26N1600 8GB

Essencore Limited KD48GU481-26N1600 8GB