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Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Samsung M378B5173BH0-CH9 4GB vs Crucial Technology BLS8G4D32AESBK.M8FE 8GB

总分
star star star star star
Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分
star star star star star
Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

差异 规格 评论

差异

Samsung M378B5173BH0-CH9 4GB 需要考虑的原因
Samsung M378B5173BH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 27
    左右 15% 更低的延时
Crucial Technology BLS8G4D32AESBK.M8FE 8GB 需要考虑的原因
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.1 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.6 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 27
  • 读取速度，GB/s
    13.4 left arrow 18.1
  • 写入速度，GB/s
    8.0 left arrow 14.6
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2269 left arrow 3446

Samsung M378B5173BH0-CH9 4GB RAM的比较

Kingston HX318C10FK/4 4GB
Apacer Technology D12.2755BS.001 16GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
内存RAM
Corsair CM5S16GM4800A40K2 16GB
Corsair CM5S16GM4800A40K2 16GB
G Skill Intl F4-2400C15-8GRK 8GB
G Skill Intl F4-2400C15-8GRK 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Avant Technology J642GU42J7240N2 16GB
Avant Technology J642GU42J7240N2 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Samsung M393A2G40EB1-CRC 16GB
Samsung M393A2G40EB1-CRC 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMK8GX4M2A2400C14 4GB
Corsair CMK8GX4M2A2400C14 4GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Kingston HX432C15PB3/16G 16GB
Kingston HX432C15PB3/16G 16GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV16GX4M1A2666C18 16GB
Corsair CMV16GX4M1A2666C18 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Hyundai Inc GR26C16S8K2HU416 8GB
Hyundai Inc GR26C16S8K2HU416 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Panram International Corporation M424051 4GB
Panram International Corporation M424051 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Kingston 9905734-022.A00G 16GB
Kingston 9905734-022.A00G 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M378A5244CB0-CVF 4GB
Samsung M378A5244CB0-CVF 4GB
内存RAM
Kingston HP16D3LS1KBGH/4G 4GB
Kingston HP16D3LS1KBGH/4G 4GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Kingston 9965600-027.A00G 16GB
Kingston 9965600-027.A00G 16GB
内存RAM