Samsung M378B5173BH0-CH9 4GB vs Crucial Technology CB8GU2666.C8ET 8GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Crucial Technology CB8GU2666.C8ET 8GB

Crucial Technology CB8GU2666.C8ET 8GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 35

左右 34% 更低的延时

Crucial Technology CB8GU2666.C8ET 8GB

需要考虑的原因
Crucial Technology CB8GU2666.C8ET 8GB

报告一个错误

更快的读取速度，GB/s

15 13.4

测试中的平均数值
更快的写入速度，GB/s

10.1 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Crucial Technology CB8GU2666.C8ET 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 35
读取速度，GB/s

13.4 15.0
写入速度，GB/s

8.0 10.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2269 2636

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Nanya Technology NT8GA64D88AX3S-HR 8GB

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Samsung M393B2G70BH0-CH9 16GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB

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Mushkin MR[ABC]4U360JNNM8G 8GB

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Kingston KHX3200C18D4/16G 16GB

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Samsung M393B2G70BH0-CH9 16GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

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Kingston 9905665-023.A00G 4GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

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Kingston HP669238-071-HYC 4GB

Kingston KHX2933C17S4/16G 16GB

Kingston KHX2933C17S4/16G 16GB