RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT16G4DFRA266.C8FE 16GB

Samsung M378B5173BH0-CH9 4GB vs Crucial Technology CT16G4DFRA266.C8FE 16GB

总分
star star star star star
Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分
star star star star star
Crucial Technology CT16G4DFRA266.C8FE 16GB

Crucial Technology CT16G4DFRA266.C8FE 16GB

差异 规格 评论

差异

Samsung M378B5173BH0-CH9 4GB 需要考虑的原因
Samsung M378B5173BH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 31
    左右 26% 更低的延时
Crucial Technology CT16G4DFRA266.C8FE 16GB 需要考虑的原因
Crucial Technology CT16G4DFRA266.C8FE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.3 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 31
  • 读取速度，GB/s
    13.4 left arrow 16.3
  • 写入速度，GB/s
    8.0 left arrow 11.7
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2269 left arrow 3179

Samsung M378B5173BH0-CH9 4GB RAM的比较

Kingston HX318C10FK/4 4GB
Apacer Technology D12.2755BS.001 16GB

Crucial Technology CT16G4DFRA266.C8FE 16GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Samsung M393A4K40BB2-CTD 32GB
Samsung M393A4K40BB2-CTD 32GB
内存RAM
Crucial Technology CT8G4SFS832A.C8FE 8GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
内存RAM
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Crucial Technology CT16G4SFD8266 16GB
Crucial Technology CT16G4SFD8266 16GB
内存RAM
A-DATA Technology AX5U6000C4016G-B 16GB
A-DATA Technology AX5U6000C4016G-B 16GB
Kingston KF548C38-16 16GB
Kingston KF548C38-16 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Panram International Corporation W4N2400PS-8G 8GB
Panram International Corporation W4N2400PS-8G 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C15-8GTZSW 8GB
G Skill Intl F4-3200C15-8GTZSW 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology CT16G4S24AM.M16FB 16GB
Crucial Technology CT16G4S24AM.M16FB 16GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Corsair CMU32GX4M4C3000C16 8GB
Corsair CMU32GX4M4C3000C16 8GB
内存RAM
A-DATA Technology DDR3 2133X 8GB
A-DATA Technology DDR3 2133X 8GB
G Skill Intl F4-3466C16-16GTZSW 16GB
G Skill Intl F4-3466C16-16GTZSW 16GB
内存RAM