Samsung M378B5173BH0-CH9 4GB vs Crucial Technology CT4G4DFS824A.C8FADP 4GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Crucial Technology CT4G4DFS824A.C8FADP 4GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 25

左右 8% 更低的延时

Crucial Technology CT4G4DFS824A.C8FADP 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FADP 4GB

报告一个错误

更快的读取速度，GB/s

16 13.4

测试中的平均数值
更快的写入速度，GB/s

11.0 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 25
读取速度，GB/s

13.4 16.0
写入速度，GB/s

8.0 11.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2269 2544

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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最新比较

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SK Hynix HMA84GL7AMR4N-TF 32GB

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Kingston 99U5428-063.A00LF 8GB

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Micron Technology 36ASF4G72PZ-2G3B1 32GB

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Kingston 99U5595-005.A00LF 2GB

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AMD R9S48G3206U2S 8GB

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Kingston KF3200C16D4/8GX 8GB

Kingston KF3200C16D4/8GX 8GB

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Avant Technology W6451U67J5213NB 4GB

Avant Technology W6451U67J5213NB 4GB

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Avant Technology J642GU42J9266N4 16GB

Avant Technology J642GU42J9266N4 16GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Micron Technology 36ASF4G72PZ-2G3A1 32GB

Micron Technology 36ASF4G72PZ-2G3A1 32GB

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

Kingston KHX2933C17S4/16G 16GB

Kingston KHX2933C17S4/16G 16GB

Crucial Technology CT51264BD1339.M16F 4GB

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Gold Key Technology Co Ltd NMUD480E85-3200E 8GB

Gold Key Technology Co Ltd NMUD480E85-3200E 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Micron Technology 16ATF2G64AZ-2G6D1 16GB

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