Samsung M378B5173BH0-CH9 4GB vs G Skill Intl F4-3000C15-4GRBB 4GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

G Skill Intl F4-3000C15-4GRBB 4GB

G Skill Intl F4-3000C15-4GRBB 4GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 33

左右 30% 更低的延时

G Skill Intl F4-3000C15-4GRBB 4GB

需要考虑的原因
G Skill Intl F4-3000C15-4GRBB 4GB

报告一个错误

更快的读取速度，GB/s

15.8 13.4

测试中的平均数值
更快的写入速度，GB/s

12.5 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

G Skill Intl F4-3000C15-4GRBB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 33
读取速度，GB/s

13.4 15.8
写入速度，GB/s

8.0 12.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2269 2994

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BL8G30C15U4B.M8FE1 8GB

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Kingston 99P5474-014.A00LF 4GB

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G Skill Intl F4-2400C14-4GRK 4GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Micron Technology TEAMGROUP-UD4-2400 16GB

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Kingston HP698651-154-MCN 8GB

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Crucial Technology CT16G4SFD8266.C16FJ 16GB

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G Skill Intl F3-2400C11-8GSR 8GB

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Corsair CM4X16GE2400C16K4 16GB

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Kingston K1CXP8-MIE 16GB

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Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43EB1-CTD 16GB

Samsung M471A2K43EB1-CTD 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

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G Skill Intl F4-3200C16-16GTZRX 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Samsung M471A2K43EB1-CTD 16GB

Samsung M471A2K43EB1-CTD 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Corsair CMK16GX4M2C3333C16 8GB

Corsair CMK16GX4M2C3333C16 8GB