RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5173BH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
比较
Samsung M378B5173BH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
总分
Samsung M378B5173BH0-CH9 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5173BH0-CH9 4GB
报告一个错误
低于PassMark测试中的延时,ns
23
27
左右 15% 更低的延时
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
报告一个错误
更快的读取速度,GB/s
14.6
13.4
测试中的平均数值
更快的写入速度,GB/s
10.5
8.0
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Samsung M378B5173BH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
23
27
读取速度,GB/s
13.4
14.6
写入速度,GB/s
8.0
10.5
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2269
2409
Samsung M378B5173BH0-CH9 4GB RAM的比较
Kingston HX318C10FK/4 4GB
Apacer Technology D12.2755BS.001 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB RAM的比较
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B5173BH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
Kingston 9905403-061.A00LF 2GB
Crucial Technology BL8G26C16S4B.8FD 8GB
Samsung M471B1G73DB0-YK0 8GB
SK Hynix HMA82GU6AFR8N-UH 16GB
Kingston 9905403-061.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMSX32GX4M2A3000C16 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
PNY Electronics PNY 2GB
Kingston KHX2400C15D4/4G 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Wilk Elektronik S.A. GR3200D464L22S/16G 16GB
Crucial Technology CT51264BA1339.C16F 4GB
V-Color Technology Inc. TN416G26D819-SB 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-2666C18-32GRS 32GB
Crucial Technology CT25664AA800.M16FM 2GB
SK Hynix HMA42GR7AFR4N-TF 16GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Corsair CMK64GX4M2A2666C16 32GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMW16GX4M2C3200C14 8GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BL8G30C15U4BL.M8FE1 8GB
报告一个错误
×
Bug description
Source link