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Samsung M378B5173BH0-CH9 4GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Samsung M378B5173BH0-CH9 4GB vs Micron Technology 18ASF1G72PDZ-2G1B1 8GB

总分
star star star star star
Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分
star star star star star
Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

差异 规格 评论

差异

Samsung M378B5173BH0-CH9 4GB 需要考虑的原因
Samsung M378B5173BH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 54
    左右 57% 更低的延时
  • 更快的读取速度，GB/s
    13.4 left arrow 9.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.0 left arrow 7.3
    测试中的平均数值
Micron Technology 18ASF1G72PDZ-2G1B1 8GB 需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M378B5173BH0-CH9 4GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 54
  • 读取速度，GB/s
    13.4 left arrow 9.3
  • 写入速度，GB/s
    8.0 left arrow 7.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2269 left arrow 1904

Samsung M378B5173BH0-CH9 4GB RAM的比较

Kingston HX318C10FK/4 4GB
Apacer Technology D12.2755BS.001 16GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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