Samsung M378B5173BH0-CH9 4GB vs Samsung M386A8K40CM2-CRC 64GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Samsung M386A8K40CM2-CRC 64GB

Samsung M386A8K40CM2-CRC 64GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 41

左右 44% 更低的延时
更快的读取速度，GB/s

13.4 8.2

测试中的平均数值
更快的写入速度，GB/s

8.0 5.4

测试中的平均数值

Samsung M386A8K40CM2-CRC 64GB

需要考虑的原因
Samsung M386A8K40CM2-CRC 64GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Samsung M386A8K40CM2-CRC 64GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 41
读取速度，GB/s

13.4 8.2
写入速度，GB/s

8.0 5.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2269 1704

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905403-061.A00LF 2GB

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Transcend Information TS1GLH64V4B 8GB

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Samsung M378B5173BH0-CH9 4GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Kingston 99U5474-010.A00LF 2GB

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Micron Technology 8ATF1G64HZ-2G3B1 8GB

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Mushkin 99[2/7/4]205[F/T] 8GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Kingston KHX3200C18D4/8G 8GB

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Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

G Skill Intl F4-3733C17-8GTZA 8GB

G Skill Intl F4-3733C17-8GTZA 8GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB

PNY Electronics PNY 2GB

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Crucial Technology BLT4G4D30AETA.K8FD 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3200C16-16GTRG 16GB

G Skill Intl F4-3200C16-16GTRG 16GB