Samsung M378B5173BH0-CH9 4GB vs Samsung M393A2G40EB1-CRC 16GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Samsung M393A2G40EB1-CRC 16GB

Samsung M393A2G40EB1-CRC 16GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 55

左右 58% 更低的延时
更快的读取速度，GB/s

13.4 9.3

测试中的平均数值
更快的写入速度，GB/s

8.0 7.4

测试中的平均数值

Samsung M393A2G40EB1-CRC 16GB

需要考虑的原因
Samsung M393A2G40EB1-CRC 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Samsung M393A2G40EB1-CRC 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 55
读取速度，GB/s

13.4 9.3
写入速度，GB/s

8.0 7.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2269 2078

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R748G2133U2S 8GB

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AMD R5S38G1601U2S 8GB

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Essencore Limited IM4AGU88A30-FGGHMB 16GB

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Crucial Technology BLE8G4D26AFEA.16FAD 8GB

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AMD R5316G1609U2K 8GB

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Kingston 9965643-002.A01G 4GB

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PUSKILL DDR3 1600 8G 8GB

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Samsung M378A2G43AB3-CWE 16GB

Samsung M378A2G43AB3-CWE 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMK32GX4M4K4333C19 8GB

Corsair CMK32GX4M4K4333C19 8GB

Kingston 9905584-016.A00LF 4GB

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Kingston 9965600-027.A01G 16GB

Kingston 9965600-027.A01G 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-3733C17-8GTZSW 8GB

G Skill Intl F4-3733C17-8GTZSW 8GB