Samsung M378B5173BH0-CH9 4GB vs SK Hynix HMA42GR7AFR4N-TF 16GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

SK Hynix HMA42GR7AFR4N-TF 16GB

SK Hynix HMA42GR7AFR4N-TF 16GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 50

左右 54% 更低的延时
更快的读取速度，GB/s

13.4 10.6

测试中的平均数值

SK Hynix HMA42GR7AFR4N-TF 16GB

需要考虑的原因
SK Hynix HMA42GR7AFR4N-TF 16GB

报告一个错误

更快的写入速度，GB/s

8.2 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

SK Hynix HMA42GR7AFR4N-TF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 50
读取速度，GB/s

13.4 10.6
写入速度，GB/s

8.0 8.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2269 2386

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4SFS824A.C8FE 8GB

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Kingston 9905471-006.A01LF 4GB

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Crucial Technology CB8GU2400.C8D 8GB

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Samsung M393B2G70BH0-CK0 16GB

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G Skill Intl F4-4266C17-16GTRGB 16GB

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SK Hynix HYMP112S64CP6-S6 1GB

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Transcend Information AQD-SD4U8GE21-SG 8GB

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SK Hynix HYMP112S64CP6-S6 1GB

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Corsair CM4X8GF2400C16K4 8GB

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Kingston MSI16D3LS1MNG/8G 8GB

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Samsung M471A1K43CB1-CTD 8GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Crucial Technology CT8G4SFRA32A.M8FR 8GB

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SK Hynix HMAA4GS6MJR8N-VK 32GB

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Kingston HP698651-154-MCN 8GB

G Skill Intl F4-2133C15-4GRK 4GB

G Skill Intl F4-2133C15-4GRK 4GB

SK Hynix HYMP112U64CP8-S5 1GB

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Apacer Technology 78.CAGPN.AZ50C 8GB

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Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Corsair CMU32GX4M4D3000C16 8GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston KF3000C16D4/32GX 32GB

Kingston KF3000C16D4/32GX 32GB