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Samsung M378B5173BH0-CH9 4GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB

Samsung M378B5173BH0-CH9 4GB vs Team Group Inc. TEAMGROUP-ED4-2400 16GB

总分
star star star star star
Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分
star star star star star
Team Group Inc. TEAMGROUP-ED4-2400 16GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB

差异 规格 评论

差异

Samsung M378B5173BH0-CH9 4GB 需要考虑的原因
Samsung M378B5173BH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 85
    左右 73% 更低的延时
  • 更快的读取速度，GB/s
    13.4 left arrow 13.2
    测试中的平均数值
Team Group Inc. TEAMGROUP-ED4-2400 16GB 需要考虑的原因
Team Group Inc. TEAMGROUP-ED4-2400 16GB
报告一个错误
  • 更快的写入速度，GB/s
    9.2 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M378B5173BH0-CH9 4GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 85
  • 读取速度，GB/s
    13.4 left arrow 13.2
  • 写入速度，GB/s
    8.0 left arrow 9.2
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2269 left arrow 1838

Samsung M378B5173BH0-CH9 4GB RAM的比较

Kingston HX318C10FK/4 4GB
Apacer Technology D12.2755BS.001 16GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB RAM的比较

Kingston 9905471-002.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Ramaxel Technology RMUA5200ME78HAF-3200 8GB
Ramaxel Technology RMUA5200ME78HAF-3200 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
A-DATA Technology DDR4 2133 2OZ 8GB
A-DATA Technology DDR4 2133 2OZ 8GB
内存RAM
Corsair CMK32GX5M2A4800C40 16GB
Corsair CMK32GX5M2A4800C40 16GB
Asgard VMA41UG-MEC1U2AW1 8GB
Asgard VMA41UG-MEC1U2AW1 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
SK Hynix HMA81GS6CJR8N-XN 8GB
SK Hynix HMA81GS6CJR8N-XN 8GB
内存RAM
Samsung M471A5143SB1-CRC 4GB
Samsung M471A5143SB1-CRC 4GB
G Skill Intl F4-2400C16-8GFX 8GB
G Skill Intl F4-2400C16-8GFX 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905598-028.A00G 8GB
Kingston 9905598-028.A00G 8GB
内存RAM