Samsung M378B5173BH0-CH9 4GB vs Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 26

左右 12% 更低的延时

Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

报告一个错误

更快的读取速度，GB/s

17.2 13.4

测试中的平均数值
更快的写入速度，GB/s

17.1 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 26
读取速度，GB/s

13.4 17.2
写入速度，GB/s

8.0 17.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2269 3757

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT4G4DFS824A.M8FF 4GB

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Kingston KTP9W1-MIE 16GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-4400C17-16GTZR 16GB

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Kingston 9905428-401.A00LF 8GB

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SK Hynix HMA82GU6MFR8N-TF 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMK64GX4M4X4000C18 16GB

Corsair CMK64GX4M4X4000C18 16GB