RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M378B5173BH0-CH9 4GB
Transcend Information JM2666HLB-8G 8GB

Samsung M378B5173BH0-CH9 4GB vs Transcend Information JM2666HLB-8G 8GB

总分
star star star star star
Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分
star star star star star
Transcend Information JM2666HLB-8G 8GB

Transcend Information JM2666HLB-8G 8GB

差异 规格 评论

差异

Samsung M378B5173BH0-CH9 4GB 需要考虑的原因
Samsung M378B5173BH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 28
    左右 18% 更低的延时
Transcend Information JM2666HLB-8G 8GB 需要考虑的原因
Transcend Information JM2666HLB-8G 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.1 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M378B5173BH0-CH9 4GB
Transcend Information JM2666HLB-8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 28
  • 读取速度，GB/s
    13.4 left arrow 16.1
  • 写入速度，GB/s
    8.0 left arrow 12.0
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2269 left arrow 2920

Samsung M378B5173BH0-CH9 4GB RAM的比较

Kingston HX318C10FK/4 4GB
Apacer Technology D12.2755BS.001 16GB

Transcend Information JM2666HLB-8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Transcend Information JM2666HLB-8G 8GB
Transcend Information JM2666HLB-8G 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
G Skill Intl F4-3600C16-16GTZN 16GB
G Skill Intl F4-3600C16-16GTZN 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston 99U5663-006.A00G 16GB
Kingston 99U5663-006.A00G 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 99U5663-006.A00G 16GB
Kingston 99U5663-006.A00G 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Kingston 9905625-065.A00G 16GB
Kingston 9905625-065.A00G 16GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Crucial Technology BLS8G4D26BFSC.16FD2 8GB
Crucial Technology BLS8G4D26BFSC.16FD2 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston KHX3600C17D4/8GX 8GB
Kingston KHX3600C17D4/8GX 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
SK Hynix HMA41GR7BJR4N-UH 8GB
SK Hynix HMA41GR7BJR4N-UH 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB
Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
内存RAM