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Samsung M378B5673EH1-CF8 2GB
Asgard VMA45UG-MEC1U2AW1 8GB

Samsung M378B5673EH1-CF8 2GB vs Asgard VMA45UG-MEC1U2AW1 8GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 47
    左右 40% 更低的延时
  • 更快的读取速度，GB/s
    12.7 left arrow 11.8
    测试中的平均数值
Asgard VMA45UG-MEC1U2AW1 8GB 需要考虑的原因
Asgard VMA45UG-MEC1U2AW1 8GB
报告一个错误
  • 更快的写入速度，GB/s
    9.2 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Asgard VMA45UG-MEC1U2AW1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 47
  • 读取速度，GB/s
    12.7 left arrow 11.8
  • 写入速度，GB/s
    7.5 left arrow 9.2
  • 内存带宽，mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 2323

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Asgard VMA45UG-MEC1U2AW1 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Apacer Technology D22.23263S.002 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
内存RAM
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G Skill Intl F4-4266C17-8GTZRB 8GB
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内存RAM
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A-DATA Technology DQKD1A08 1GB
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内存RAM
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Ramaxel Technology RMT3020EC58E9F1333 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
内存RAM
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内存RAM
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PNY Electronics PNY 2GB
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内存RAM
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AMD AE34G1601U1 4GB
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Samsung M378A1G43DB0-CPB 8GB
内存RAM