Samsung M378B5673EH1-CF8 2GB vs Asgard VMA45UG-MEC1U2AW2 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Asgard VMA45UG-MEC1U2AW2 8GB

Asgard VMA45UG-MEC1U2AW2 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 34

左右 18% 更低的延时

Asgard VMA45UG-MEC1U2AW2 8GB

需要考虑的原因
Asgard VMA45UG-MEC1U2AW2 8GB

报告一个错误

更快的读取速度，GB/s

17.2 12.7

测试中的平均数值
更快的写入速度，GB/s

13.5 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Asgard VMA45UG-MEC1U2AW2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 34
读取速度，GB/s

12.7 17.2
写入速度，GB/s

7.5 13.5
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 3425

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Corsair CM4X8GD3200C16K2E 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Kingston ASU21D4U5S1MB-4 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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AMD R744G2400U1S 4GB

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G Skill Intl F3-1866C8-8GTX 8GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMK16GX4M4A2800C16 4GB

Corsair CMK16GX4M4A2800C16 4GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Corsair CMK32GX4M2B3333C16 16GB

Corsair CMK32GX4M2B3333C16 16GB

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Crucial Technology CT102464BF160B-16F 8GB

Kingston 9905744-024.A00G 16GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Corsair CMK192GX4M12P3200C16 16GB