Samsung M378B5673EH1-CF8 2GB vs Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

报告一个错误

更快的读取速度，GB/s

16.7 12.7

测试中的平均数值
更快的写入速度，GB/s

14.6 7.5

测试中的平均数值
更高的内存带宽，mbps

25600 8500

左右 3.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

12.7 16.7
写入速度，GB/s

7.5 14.6
内存带宽，mbps

8500 25600

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1066 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1988 3509

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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