Samsung M378B5673EH1-CF8 2GB vs Corsair CMK16GX4M2E4000C19 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Corsair CMK16GX4M2E4000C19 8GB

Corsair CMK16GX4M2E4000C19 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时

Corsair CMK16GX4M2E4000C19 8GB

需要考虑的原因
Corsair CMK16GX4M2E4000C19 8GB

报告一个错误

更快的读取速度，GB/s

14.3 12.7

测试中的平均数值
更快的写入速度，GB/s

12.0 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Corsair CMK16GX4M2E4000C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

12.7 14.3
写入速度，GB/s

7.5 12.0
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 2929

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Crucial Technology CT8G4DFRA32A.M8FR 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Kingston 9905471-002.A00LF 2GB

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Corsair CMD16GX4M4B3200C15 4GB

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AMD R5316G1609U2K 8GB

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Micron Technology 8ATF1G64AZ-2G3E1 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Essencore Limited IM44GU48N26-FFFHM 4GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Mushkin 99[2/7/4]190F 4GB

Mushkin 99[2/7/4]190F 4GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Team Group Inc. TEAMGROUP-D4-3600 4GB

Team Group Inc. TEAMGROUP-D4-3600 4GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Corsair CM4X8GF2400C16N2 8GB

Corsair CM4X8GF2400C16N2 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3600C16-16GTZNC 16GB

G Skill Intl F4-3600C16-16GTZNC 16GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB