Samsung M378B5673EH1-CF8 2GB vs Corsair CMK32GX4M2C3200C18 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Corsair CMK32GX4M2C3200C18 16GB

Corsair CMK32GX4M2C3200C18 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 7% 更低的延时

Corsair CMK32GX4M2C3200C18 16GB

需要考虑的原因
Corsair CMK32GX4M2C3200C18 16GB

报告一个错误

更快的读取速度，GB/s

16.8 12.7

测试中的平均数值
更快的写入速度，GB/s

13.1 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Corsair CMK32GX4M2C3200C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 30
读取速度，GB/s

12.7 16.8
写入速度，GB/s

7.5 13.1
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 3337

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

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Kingston KHX318C10FR/8G 8GB

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G Skill Intl F4-4400C17-8GVK 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology CT4G4SFS8213.C8FADP 4GB

Crucial Technology CT4G4SFS8213.C8FADP 4GB

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Kingston 9905469-143.A00LF 4GB

Corsair CMT64GX4M4K3600C18 16GB

Corsair CMT64GX4M4K3600C18 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-3200C16-8GIS 8GB

G Skill Intl F4-3200C16-8GIS 8GB

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Kingston 9965662-016.A00G 16GB

Corsair CMK16GX4M2Z3600C14 8GB

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AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Apacer Technology 78.CAGR9.40C0B 8GB

Apacer Technology 78.CAGR9.40C0B 8GB