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Samsung M378B5673EH1-CF8 2GB
Crucial Technology BL8G32C16U4WL.M8FE 8GB

Samsung M378B5673EH1-CF8 2GB vs Crucial Technology BL8G32C16U4WL.M8FE 8GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Crucial Technology BL8G32C16U4WL.M8FE 8GB

Crucial Technology BL8G32C16U4WL.M8FE 8GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
Crucial Technology BL8G32C16U4WL.M8FE 8GB 需要考虑的原因
Crucial Technology BL8G32C16U4WL.M8FE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.2 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.6 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 8500
    左右 2.51 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BL8G32C16U4WL.M8FE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 28
  • 读取速度，GB/s
    12.7 left arrow 18.2
  • 写入速度，GB/s
    7.5 left arrow 14.6
  • 内存带宽，mbps
    8500 left arrow 21300
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 3384

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Crucial Technology BL8G32C16U4WL.M8FE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology CB8GS2400.C8JT 8GB
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内存RAM
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Ramaxel Technology RMR5040ED58E9W1600 4GB
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内存RAM
Crucial Technology BLS8G3N169ES4.16FE 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
G Skill Intl F4-4000C18-8GTZR 8GB
G Skill Intl F4-4000C18-8GTZR 8GB
内存RAM
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Essencore Limited KD48GU88C-26N1600 8GB
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Kingston 99U5702-089.A00G 8GB
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Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Kingston KHX2400C15/8G 8GB
Kingston KHX2400C15/8G 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK128GX4M8Z2933C16 16GB
Corsair CMK128GX4M8Z2933C16 16GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Corsair CMD32GX4M4A2666C15 8GB
Corsair CMD32GX4M4A2666C15 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
内存RAM
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Patriot Memory (PDP Systems) PSD22G8002 2GB
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Avant Technology W6451U67J5213NB 4GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
SK Hynix HMA82GU6MFR8N-TF 16GB
SK Hynix HMA82GU6MFR8N-TF 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
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Panram International Corporation L421008G4C1528K34O8A 8
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Golden Empire CL14-16-16 D4-3000 4GB
Golden Empire CL14-16-16 D4-3000 4GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
A-DATA Technology AO2P32NCSV1-BEVS 16GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
内存RAM