Samsung M378B5673EH1-CF8 2GB vs Crucial Technology BLS8G4S240FSD.16FBD 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Crucial Technology BLS8G4S240FSD.16FBD 8GB

Crucial Technology BLS8G4S240FSD.16FBD 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 34

左右 18% 更低的延时

Crucial Technology BLS8G4S240FSD.16FBD 8GB

需要考虑的原因
Crucial Technology BLS8G4S240FSD.16FBD 8GB

报告一个错误

更快的读取速度，GB/s

15.5 12.7

测试中的平均数值
更快的写入速度，GB/s

12.2 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Crucial Technology BLS8G4S240FSD.16FBD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 34
读取速度，GB/s

12.7 15.5
写入速度，GB/s

7.5 12.2
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 2963

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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G Skill Intl F4-2400C17-16GSXF 16GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Micron Technology 8ATF1G64HZ-2G3H1 8GB

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Crucial Technology CT4G4DFS8213.C8FAD11 4GB

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Kingston KHX1600C9D3/4GX 4GB

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Crucial Technology CT8G4SFS824A.C8FJ 8GB

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DSL Memory D4SS1G082SH21A-B 16GB

Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

Apacer Technology GD2.1831WS.002 16GB

Apacer Technology GD2.1831WS.002 16GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

G Skill Intl F4-4400C17-8GVK 8GB

G Skill Intl F4-4400C17-8GVK 8GB

Kingston HX426C16FB2/8-SP 8GB

Kingston HX426C16FB2/8-SP 8GB

SK Hynix HMA82GR7AFR8N-VK 16GB

SK Hynix HMA82GR7AFR8N-VK 16GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Essencore Limited KD4AGS88C-32N220D 16GB

Essencore Limited KD4AGS88C-32N220D 16GB