Samsung M378B5673EH1-CF8 2GB vs Crucial Technology CT16G4DFD824A.M16FH 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Crucial Technology CT16G4DFD824A.M16FH 16GB

Crucial Technology CT16G4DFD824A.M16FH 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

Crucial Technology CT16G4DFD824A.M16FH 16GB

需要考虑的原因
Crucial Technology CT16G4DFD824A.M16FH 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 28

左右 -12% 更低的延时
更快的读取速度，GB/s

17.2 12.7

测试中的平均数值
更快的写入速度，GB/s

13.0 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT16G4DFD824A.M16FH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 25
读取速度，GB/s

12.7 17.2
写入速度，GB/s

7.5 13.0
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 3001

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Kingston X6TCK6-MIE 32GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-3600C17-16GTZ 16GB

G Skill Intl F4-3600C17-16GTZ 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Micron Technology 16ATF2G64AZ-2G6H1 16GB

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Kingston KV0M5R-MIE 8GB

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Team Group Inc. Team-Elite-2400 4GB

Team Group Inc. Team-Elite-2400 4GB