Samsung M378B5673EH1-CF8 2GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

Samsung M378B5673EH1-CF8 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 41

左右 32% 更低的延时
更快的读取速度，GB/s

12.7 9.3

测试中的平均数值
更快的写入速度，GB/s

7.5 6.9

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

报告一个错误

更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 41
读取速度，GB/s

12.7 9.3
写入速度，GB/s

7.5 6.9
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 2044

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Hyundai Inc AR32C16S8K2HU416R 8GB

Hyundai Inc AR32C16S8K2HU416R 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Micron Technology M471A1K43CB1-CTD 8GB

Micron Technology M471A1K43CB1-CTD 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Corsair CMK32GX4M4A2400C16 8GB

Corsair CMK32GX4M4A2400C16 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Crucial Technology CT16G4DFD824A.M16FJ 16GB

Crucial Technology CT16G4DFD824A.M16FJ 16GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Crucial Technology CT16G4SFD832A.M16FRS 16GB

Crucial Technology CT16G4SFD832A.M16FRS 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMT32GX4M4C3466C16 8GB

Corsair CMT32GX4M4C3466C16 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Lexar Co Limited LD4AU016G-H2666G 16GB

Lexar Co Limited LD4AU016G-H2666G 16GB

Mushkin 991586 2GB

Mushkin 991586 2GB

Panram International Corporation PUD42400C168GVS 8GB

Panram International Corporation PUD42400C168GVS 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

V-Color Technology Inc. TN416G24D817-VHA/R 16GB

V-Color Technology Inc. TN416G24D817-VHA/R 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-2800C15-8GVSB 8GB

G Skill Intl F4-2800C15-8GVSB 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB