Samsung M378B5673EH1-CF8 2GB vs Kingston 9905702-012.A00G 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Kingston 9905702-012.A00G 8GB

Kingston 9905702-012.A00G 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 33

左右 15% 更低的延时
更快的读取速度，GB/s

12.7 9.6

测试中的平均数值
更快的写入速度，GB/s

7.5 6.4

测试中的平均数值

Kingston 9905702-012.A00G 8GB

需要考虑的原因
Kingston 9905702-012.A00G 8GB

报告一个错误

更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Kingston 9905702-012.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 33
读取速度，GB/s

12.7 9.6
写入速度，GB/s

7.5 6.4
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 1620

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMR32GX4M4D3200C16 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Crucial Technology BL8G30C15U4W.8FE 8GB

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Kingston 99U5403-036.A00G 4GB

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Kingston 2GB-DDR2 800Mhz 2GB

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G Skill Intl F3-2133C9-4GAB 4GB

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GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

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Micron Technology M471A1K43BB1-CRC 8GB

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Patriot Memory (PDP Systems) 3000 C15 Series 8GB

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