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Samsung M378B5673EH1-CF8 2GB
Kingston HX421C14FB/4 4GB

Samsung M378B5673EH1-CF8 2GB vs Kingston HX421C14FB/4 4GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Kingston HX421C14FB/4 4GB

Kingston HX421C14FB/4 4GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 30
    左右 7% 更低的延时
Kingston HX421C14FB/4 4GB 需要考虑的原因
Kingston HX421C14FB/4 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.8 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Kingston HX421C14FB/4 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 30
  • 读取速度，GB/s
    12.7 left arrow 16.8
  • 写入速度，GB/s
    7.5 left arrow 12.2
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 2730

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Kingston HX421C14FB/4 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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G Skill Intl F4-3200C15-16GTZSK 16GB
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内存RAM
Samsung M378B5673EH1-CF8 2GB
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内存RAM
AMD AE32G1339U1 2GB
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内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
Samsung M378A1G43DB0-CPB 8GB
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Kingston 9905700-047.A00G 16GB
Kingston 9905700-047.A00G 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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Micron Technology 36ADS2G72PZ-2G1A1 16GB
内存RAM
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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
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Essencore Limited KD4AGU88C-26N1900 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Smart Modular SF464128CK8I6GKSEG 4GB
Smart Modular SF464128CK8I6GKSEG 4GB
内存RAM
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Tanbassh 8G 2666MHZ 8GB
Tanbassh 8G 2666MHZ 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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Kingmax Semiconductor GSAG42F-18---------- 8GB
内存RAM
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Kingston KHX1600C9S3L/4G 4GB
G Skill Intl F4-3200C16-8GTZRX 8GB
G Skill Intl F4-3200C16-8GTZRX 8GB
内存RAM